By J. H Poynting and J. J. Thomson
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34, 1492-1494 (1975). 29. P. H. Handel, Fundamental quantum 1/f noise in semiconductor devices, IEEE Trans. Electron Devices 41, 2023-2033 (1994). 30. Th. M. Nieuwenhuizen, D. Frenkel, and N. G. van Kampen, Objections to Handel’s quantum theory of 1/f noise, Phys. Rev. A 35, 2750-2753 (1987). 31. L. B. Kiss and P. Heszler, An exact proof of the invalidity of ‘Handel’s quantum 1/f noise model’, based on quantum electrodynamics, J. Phys. C: Solid State Phys. 19, L631-L633 (1986). 32. C. M. Van Vliet, A survey of results and future prospects on quantum 1/f noise and 1/f noise in general, Solid-State Electron.
The gate voltage noise spectrum can also be used to estimate the depth dependence of the trap density. The depth is calculated from the frequency according to z Ȝ ln(1 / 2ʌfĲ 0 ) (2-20) Here the time constant W0 is usually taken as 10-10 s. Fig. 2-11 illustrates the trap density profile for a pMOSFET with 5-nm ALD Al2O3 as gate dielectrics. The low-frequency noise was measured between 1 and 20 kHz. Chapter 2 48 An interfacial oxide, around 1-nm thick, was found to be present between the Al2O3 and the channel.
2-6(b) and then extract relevant parameters. Time domain measurements are important in order to characterize RTS noise and can for example be performed with an oscilloscope. The RTS noise pulse heights and time durations in the upper and lower RTS level are collected from the oscilloscope data in order to analyze the RTS noise. Pulse trains with 20-100 transitions should be recorded for each bias point for reliable extraction of the mean time durations; an uninterrupted stream containing all the necessary transitions is ideally preferred.
A text-book of physics: Sound (Fourth Edition) by J. H Poynting and J. J. Thomson